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Thin-Film Transistor Reliability
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Authors: Meng Zhang, Mingxiang Wang

Thin-Film Transistor Reliability

eBook: US $69 Special Offer (PDF + Printed Copy): US $123
Printed Copy: US $88
Library License: US $276
ISBN: 978-981-5322-62-0 (Print)
ISBN: 978-981-5322-61-3 (Online)
Year of Publication: 2025
DOI: 10.2174/97898153226131250101
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Introduction

Thin-Film Transistor Reliability provides a comprehensive analysis of the reliability challenges in thin-film transistors (TFTs), essential components in modern electronics. Covering topics from fundamental structures to degradation mechanisms, this book equips researchers and engineers with the tools to assess, analyze, and improve TFT reliability.

Key Features:

  • - In-depth discussion of TFT degradation mechanisms and reliability concerns.
  • - Comprehensive analysis techniques, including transfer curve and noise analysis.
  • - Effects of DC/AC voltage stress, self-heating, and environmental factors
  • - Strategies for enhancing TFT reliability through structural modifications.


Readership

Researchers, engineers, graduate students, and industry professionals in semiconductor electronics and display technology.


eBook: US $69 Special Offer: US $123 Printed Copy: US $88 Library License: US $276

Foreword

It is with great pleasure that I introduce "Thin-Film Transistor Reliability", a comprehensive exploration into the intricate world of thin-film transistor (TFT) reliability. This book, authored by Prof. Meng Zhang and Prof. Mingxiang Wang, delves deep into the essential aspects of TFT technology, shedding light on the critical factors that influence their reliability. The journey embarked upon in this book takes the reader through a meticulous study of TFTs, from their fundamental principles to the intricate details of reliability analysis methods and stress-induced degradation mechanisms.

The chapters within this book serve as a roadmap guiding readers through the evolution of TFT technology, the various applications in modern electronics, and the challenges posed by environmental factors and stress-induced degradation. By dissecting common defects, exploring reliability analysis techniques, and discussing strategies for improvement, this book equips readers with a comprehensive understanding of TFT reliability.

I commend Prof. Meng Zhang and Prof. Mingxiang Wang for their dedication and expertise in crafting this insightful masterpiece. May this book inspire further exploration and advancements in the realm of TFT reliability, shaping a more robust and reliable future for electronic devices.

Guangcai Yuan
Vice President of BOE Technology Group Co., Ltd.
Beijing
China