Nano-FET Devices: Miniaturization, Simulation, and Applications (Part 1)

Editors: Dharmendra Singh Yadav, Prabhat Singh

Nano-FET Devices: Miniaturization, Simulation, and Applications (Part 1)

ISBN: 978-981-5313-81-9
eISBN: 978-981-5313-80-2 (Online)

Introduction

This textbook provides an overview of next-generation Field-Effect Transistor (FET) technologies at the intersection of nanoelectronics, device miniaturization, and advanced applications. With a special emphasis on the evolution of semiconductor engineering, the book examines the shift from conventional CMOS to emerging FET architectures aimed at extending Moore’s Law.

Across 18 chapters, the book explores Tunnel FETs (TFETs), carbon-based FETs, and 2D-material transistors, with discussions on performance, scalability, and reliability. It features detailed analyses of advanced device structures such as HJ-DGV-TFETs, dual-pocket step-channel TFETs, and AlGaN/GaN HEMTs, as well as their roles in memory, photonics, and biomedical systems. The use of nanomaterials in biosensor integration and digital circuit design is also a key theme.

Key Features:

  • - Traces technological transitions from CMOS to novel FETs
  • - Examines nanoengineered device architectures and materials
  • - Investigates applications in optoelectronics, memory, and biosensing
  • - Analyzes simulation approaches for performance optimization
  • - Highlights interdisciplinary innovations across electronics and healthcare


Readership:

Undergraduate and college students, researchers, and professionals in electronics and nanotechnology.

Preface

Millions of transistors comprise an integrated circuit. Transistors are the essential aspects of all modern electrical components and electronic devices. Transistor size has been progressively shrunk as the VLSI industry grows to integrate more functionality onto a silicon wafer and minimize circuit power consumption. NanoFET devices are being realized using various materials with different structures, with promising results. Novel nano-FET devices should be an excellent candidate to replace the existing technologies for low-power and high-frequency applications with reduced time delay in circuit applications.

The relentless pursuit of miniaturization in semiconductor technology has led to the emergence of nano FETs as pivotal components in modern electronic systems. This book aims to provide a comprehensive overview of nano FET devices, from their theoretical foundations to application implementations. Due to the enormous study of Nano-CMOS and post-CMOS technologies and the lack of a comprehensive guidebook, research articles are now the cornerstone for the knowledge of novel design based on the fundamentals of Nano-FET devices. As a result, this book outlining the essential characteristics of Nano-CMOS and postCMOS technologies will benefit engineers who must understand the fundamentals and scholars developing/implementing Nano-CMOS and post-CMOS devices and its applications. This book, Nano-FET Devices: - Miniaturization, Simulation, and Applications, is intended to fulfil this requirement for the device research community.

In the opening chapters, readers will embark on a journey through the basic concepts of FETs, understanding how these devices operate and their significance in electronic engineering. Building upon this foundation, the book delves into the unique characteristics of nano FETs, including quantum effects, scaling considerations, and material properties that define their behavior at the nanoscale.

This book is a concise benchmark for beginners who are just getting started with Nano-FET Devices and its application with recent advancement and those who want to design integrated circuits using novel FET devices. We hope that "NanoFET Devices: Miniaturization, Simulation, and Applications" serves as a valuable resource for researchers, engineers, and students interested in unlocking the potentials of nano FET technology. May this book inspire new discoveries, innovations, and advancements at the forefront of electronic engineering

Dharmendra Singh Yadav
Department of Electronics and Communication Engineering
National Institute of Technology
Kurukshetra, Haryana 136119
India

&

Prabhat Singh
Department of Electronics and Communication Engineering
B.R. Ambedkar National Institute of Technology
Jalandhar, Punjab
India

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