Introduction

This textbook provides an overview of next-generation Field-Effect Transistor (FET) technologies at the intersection of nanoelectronics, device miniaturization, and advanced applications. With a special emphasis on the evolution of semiconductor engineering, the book examines the shift from conventional CMOS to emerging FET architectures aimed at extending Moore’s Law.

Across 18 chapters, the book explores Tunnel FETs (TFETs), carbon-based FETs, and 2D-material transistors, with discussions on performance, scalability, and reliability. It features detailed analyses of advanced device structures such as HJ-DGV-TFETs, dual-pocket step-channel TFETs, and AlGaN/GaN HEMTs, as well as their roles in memory, photonics, and biomedical systems. The use of nanomaterials in biosensor integration and digital circuit design is also a key theme.

Key Features:

• - Traces technological transitions from CMOS to novel FETs
• - Examines nanoengineered device architectures and materials
• - Investigates applications in optoelectronics, memory, and biosensing
• - Analyzes simulation approaches for performance optimization
• - Highlights interdisciplinary innovations across electronics and healthcare

Readership:

Undergraduate and college students, researchers, and professionals in electronics and nanotechnology.