Preface

Millions of transistors comprise an integrated circuit. Transistors are the essential aspect of all modern electrical components and electronic devices. The size of the transistors has been progressively shrunk as the VLSI industry grows to integrate more functionality onto a silicon wafer and minimize circuit power consumption. Nano-FET devices are being realized using various materials with different structures, with promising results. Novel nano-FET devices should be an excellent candidate to replace the existing technologies for low-power and high-frequency applications with reduced time delay in circuit applications.

The relentless pursuit of miniaturization in semiconductor technology has led to the emergence of nano FETs as pivotal components in modern electronic systems. This book aims to provide a comprehensive overview of nano FET devices, from their theoretical foundations to application implementations. Due to the enormous study of Nano-CMOS and post-CMOS technologies and the lack of a comprehensive guidebook, research articles are now the cornerstone for the knowledge of novel design based on the fundamentals of Nano-FET devices. As a result, this book outlining the essential characteristics of Nano-CMOS and post-CMOS technologies will benefit engineers who must understand the fundamentals of these devices and scholars developing/implementing Nano-CMOS and post-CMOS devices and their applications. This book, Nano-FET Devices: Miniaturization, Simulation, and Applications, is intended to fulfill this requirement of the research community.

In the opening chapters, readers will embark on a journey through the basic concepts of FETs, understanding how these devices operate and their significance in electronic engineering. Building upon this foundation, the book delves into the unique characteristics of nano FETs, including quantum effects, scaling considerations, and material properties that define their behavior at the nanoscale.