Editors: Dharmendra Singh Yadav, Prabhat Singh

Nano-FET Devices: Miniaturization, Simulation, and Applications (Part 2)

eBook: US $89 Special Offer (PDF + Printed Copy): US $152
Printed Copy: US $107
Library License: US $356
ISBN: 979-8-89881-031-3 (Print)
ISBN: 979-8-89881-030-6 (Online)
Year of Publication: 2025
DOI: 10.2174/97988988103061250101

Introduction

Presenting an advanced exploration of next-generation Field-Effect Transistor (FET) technologies, Nano-FET Devices: Miniaturisation, Simulation, and Applications (Part 2) bridges the gap between nanoscale device fundamentals and innovative real-world applications.

Spanning eighteen chapters, the book focuses on Tunnel FETs (TFETs), carbon-based FETs, and biosensor innovations, charting the shift from CMOS to TFET technologies while tackling key issues of performance, scalability, and reliability. It highlights advanced architectures such as HJ-DGV-TFETs, dual-pocket step-channel TFETs, and 2D material transistors, along with metasurface photonic devices, AlGaN/GaN HEMTs, CNT-FETs, and FET-based biosensors with applications in healthcare, digital systems, and optoelectronics.

Key Features:

  • - Integrates multidisciplinary insights across nanotechnology, photonics, RF engineering, and bioelectronics.
  • - Analyzes advanced FET architectures and their performance optimization through simulation and modeling.
  • - Explores the role of novel nanomaterials in biosensing, memory, and optoelectronic applications.
  • - Addresses design, fabrication, and scalability challenges in nano-FET development.
  • - Identifies emerging research trends driving innovation in semiconductor and nanoelectronic technologies.


Readership

For graduate students, researchers, and professionals in semiconductors, nanoelectronics, and device engineering.

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