Editors: Ashish Raman, Prabhat Singh, Naveen Kumar, Ravi Ranjan

Semiconductor Nanoscale Devices: Materials and Design Challenges

eBook: US $79 Special Offer (PDF + Printed Copy): US $125
Printed Copy: US $85
Library License: US $316
ISBN: 978-981-5313-21-5 (Print)
ISBN: 978-981-5313-20-8 (Online)
Year of Publication: 2025
DOI: 10.2174/97898153132081250101

Introduction

Semiconductor Nanoscale Devices: Materials and Design Challenges provides a comprehensive exploration of nanoscale technologies and semiconductor device design, focusing on innovative materials and advanced applications. It bridges classical and quantum concepts, offering insights into foundational materials, device architectures, and future technologies like biosensors, 6G communication, and photovoltaics. The book is organized into three sections: foundational concepts, methodologies and advancements, and next-generation applications. It emphasizes practical design, analytical modeling, and optimization for real-world applications, making it a valuable resource for professionals and researchers.

Key Features:

  • - Comprehensive coverage of nanoscale semiconductor device design challenges and innovations.
  • - Focus on advanced materials and methodologies for cutting-edge technologies.
  • - Practical insights into measurement techniques and device optimization.
  • - In-depth exploration of emerging applications like 6G, biosensors, and photovoltaics.

Readership

Graduate students, researchers, professionals in semiconductor and nanoelectronics, and academics in materials science, electrical engineering, and applied physics.

Preface

The relentless miniaturization in semiconductor technology has paved the way for nanoscale devices to become pivotal components in modern electronic systems. These advancements have brought about unprecedented opportunities and challenges, especially in materials selection and device design. "Semiconductor Nanoscale Devices: Materials and Design Challenges" aims to provide a comprehensive exploration of these cutting-edge technologies, offering insights into both the theoretical foundations and practical implementations.

As the VLSI industry continues to evolve, the reduction in transistor size has been instrumental in integrating more functionality onto silicon wafers and minimizing power consumption. This progress has led to the realization of nano-FET devices using various innovative materials and structures, demonstrating significant potential for low-power and high-frequency applications. The continuous pursuit of enhancing performance while addressing the complexities of nanoscale phenomena underscores the importance of a comprehensive guide to these advancements.

"Semiconductor Nanoscale Devices: Materials and Design Challenges" serves as a concise benchmark for beginners and experienced practitioners alike. It is tailored for those who are just getting started with nanoscale device technology and for those looking to design integrated circuits using novel FET devices. This book aims to be a valuable resource, inspiring new discoveries, innovations, and advancements at the forefront of electronic engineering. We hope that this book will serve as a guide and inspiration for researchers, engineers, and students, unlocking the potential of nanoscale semiconductor devices and contributing to the continuous evolution of electronic technology.



Ashish Raman
Department of Electronics and Communication Engineering
Dr. B. R. Ambedkar National Institute of Technology
Jalandhar, Punjab, India
Prabhat Singh
Department of Electronics and Communication Engineering
Dr. B. R. Ambedkar National Institute of Technology
Jalandhar, Punjab, India
Naveen Kumar
Device Modelling Group
James Watt School of Engineering
University of Glasgow, Glasgow
United Kingdom

&

Ravi Ranjan
Tyndall National Institute
Lee Maltings Complex Dyke Parade, Cork
Cork, Ireland